Computer simulation of semiconductor field ion images.

نویسندگان
چکیده

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Geometrical Analysis of Field - Ion Images

Field ion microscopy (FIM), transmission electron microscopy (TEM) and computer simulation techniques have been used to experimentally investigate the field ion image geometry. Electron micrographs and electron diffraction patterns were obtained from tungsten specimens after controlled amounts of field evaporation. From a knowledge of the changes in the image dimensions as a function of the var...

متن کامل

Computer simulation of three-dimensional heavy ion beam trajectory imaging techniques used for magnetic field estimation.

A magnetic field mapping technique via heavy ion beam trajectory imaging is being developed on the Madison Symmetric Torus reversed field pinch. This paper describes the computational tools created to model camera images of the light emitted from a simulated ion beam, reconstruct a three-dimensional trajectory, and estimate the accuracy of the reconstruction. First, a computer model is used to ...

متن کامل

Depth of Field Simulation in Computer Graphics

A major part of the amount of realism in a rendering engine is the engine's camera model. Simulating real camera models can produce desired realistic effects such as depth of field (DOF). Several methods are currently used to simulate DOF but they are either computationally expensive methods that produce realistic results or inaccurate but fast methods. This paper includes a list of reasons beh...

متن کامل

Ultrafast laser-triggered field ion emission from semiconductor tips

We study experimentally and theoretically the controlled field evaporation of single atoms from a semiconductor surface by ultrafast laserassisted atom probe tomography. The conventional physical mechanisms of field evaporation cannot explain the experimental results recently reported for such materials. A new model is presented in which the positive dc field leads to band bending with a high d...

متن کامل

fabrication of new ion sensitive field effect transistors (isfet) based on modification of junction-fet for analysis of hydronium, potassium and hydrazinium ions

a novel and ultra low cost isfet electrode and measurement system was designed for isfet application and detection of hydronium, hydrazinium and potassium ions. also, a measuring setup containing appropriate circuits, suitable analyzer (advantech board), de noise reduction elements, cooling system and pc was used for controlling the isfet electrode and various characteristic measurements. the t...

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: SHINKU

سال: 1985

ISSN: 0559-8516,1880-9413

DOI: 10.3131/jvsj.28.631